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DMT10H032LDV

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DMT10H032LDV Image

The DMT10H032LDV from Diodes Incorporated is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 24 to 50 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for DMT10H032LDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H032LDV
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 6.3 to 11.9 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    24 to 50 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    6.3 to 11.9 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Power Management Functions, Analog Switch

Technical Documents
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