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DMT10H9M9LCT

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DMT10H9M9LCT Image

The DMT10H9M9LCT from Diodes Incorporated is a MOSFET with Continous Drain Current 101 A, Drain Source Resistance 6.7 to 14 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Through Hole. More details for DMT10H9M9LCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H9M9LCT
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 40.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    101 A
  • Drain Source Resistance
    6.7 to 14 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    40.2 nC
  • Power Dissipation
    2.3 to 156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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