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PMPB11R2VP

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PMPB11R2VP Image

The PMPB11R2VP from Nexperia is a MOSFET with Continous Drain Current -14 to -6.1 A, Drain Source Resistance 11.2 to 64 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for PMPB11R2VP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB11R2VP
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 26 to 39 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -14 to -6.1 A
  • Drain Source Resistance
    11.2 to 64 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    26 to 39 nC
  • Power Dissipation
    1.9 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1220-2
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, computing power management

Technical Documents
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