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FTK1012SOT883

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The FTK1012SOT883 from First Silicon is a MOSFET with Continous Drain Current 350 to 600 mA, Drain Source Resistance 0.7 to 1.25 ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage 0.45 to 0.9 V. Tags: Surface Mount. More details for FTK1012SOT883 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK1012SOT883
  • Manufacturer
    First Silicon
  • Description
    20 V, 350 to 600 mA, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    350 to 600 mA
  • Drain Source Resistance
    0.7 to 1.25 ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    0.45 to 0.9 V
  • Gate Charge
    0.75 nC
  • Switching Speed
    5 to 25 ns
  • Power Dissipation
    250 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-883
  • Applications
    Relays Driver, Lamps Driver, Memories Driver, Battery Operated Systems, Load/Power Switching Cell Phones, Pagers
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