The DMT10H9M9SCT from Diodes Incorporated is a MOSFET with Continous Drain Current 99 A, Drain Source Resistance 7.2 to 16 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for DMT10H9M9SCT can be seen below.