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DMT10H9M9SH3

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DMT10H9M9SH3 Image

The DMT10H9M9SH3 from Diodes Incorporated is a MOSFET with Continous Drain Current 84 A, Drain Source Resistance 7.4 to 14 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMT10H9M9SH3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H9M9SH3
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 30 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    84 A
  • Drain Source Resistance
    7.4 to 14 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    30 nC
  • Power Dissipation
    114 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO251
  • Applications
    Motor Control, Backlighting

Technical Documents
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