1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT12H007LPS

DMT12H007LPS

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT12H007LPS Image

The DMT12H007LPS from Diodes Incorporated is a MOSFET with Continous Drain Current 90 A, Drain Source Resistance 6 to 14.1 Milliohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for DMT12H007LPS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT12H007LPS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 49 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    90 A
  • Drain Source Resistance
    6 to 14.1 Milliohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    49 nC
  • Power Dissipation
    2.9 to 96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Switching, DC-DC Converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products