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AP6NA2R7I

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The AP6NA2R7I from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 53 to 83 A, Drain Source Resistance 2.78 to 4.4 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP6NA2R7I can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6NA2R7I
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 32.8 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    53 to 83 A
  • Drain Source Resistance
    2.78 to 4.4 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    87 to 139.2 nC
  • Switching Speed
    24 to 88 ns
  • Power Dissipation
    32.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM
  • Note
    Input Capacitance :- 8200 pF
View details on the manufacturer's website
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