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DMT12H090LFDF4

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DMT12H090LFDF4 Image

The DMT12H090LFDF4 from Diodes Incorporated is a MOSFET with Continous Drain Current 3.4 A, Drain Source Resistance 90 to 350 Milliohm, Drain Source Breakdown Voltage 115 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 2.2 V. Tags: Surface Mount. More details for DMT12H090LFDF4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT12H090LFDF4
  • Manufacturer
    Diodes Incorporated
  • Description
    -12 to 12 V, 6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.4 A
  • Drain Source Resistance
    90 to 350 Milliohm
  • Drain Source Breakdown Voltage
    115 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 2.2 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN2020-6
  • Applications
    DC-DC Primary Switch, Load Switch

Technical Documents
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