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DMT15H017LPSW

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DMT15H017LPSW Image

The DMT15H017LPSW from Diodes Incorporated is a MOSFET with Continous Drain Current 9.4 to 58 A, Drain Source Resistance 14 to 25.5 Milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.6 V. Tags: Surface Mount. More details for DMT15H017LPSW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT15H017LPSW
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 50 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.4 to 58 A
  • Drain Source Resistance
    14 to 25.5 Milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.6 V
  • Gate Charge
    50 nC
  • Power Dissipation
    2.3 to 89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Synchronous Rectification, Power Switching, Class D Audio Amplifier

Technical Documents
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