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DMT3009LFVW

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The DMT3009LFVW from Diodes Incorporated is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 6.6 to 20 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT3009LFVW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT3009LFVW
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    6.6 to 20 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    12 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8 (SWP)
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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