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RD3G01BAT

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The RD3G01BAT from ROHM Semiconductor is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 31 to 49 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RD3G01BAT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3G01BAT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    31 to 49 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    9.5 to 19.3 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    DPAK, TO-252
  • Applications
    Switching

Technical Documents
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