1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT3011LDT

DMT3011LDT

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT3011LDT Image

The DMT3011LDT from Diodes Incorporated is a MOSFET with Continous Drain Current 8 to 28.9 A, Drain Source Resistance 11.1 to 32 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT3011LDT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT3011LDT
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8 to 28.9 A
  • Drain Source Resistance
    11.1 to 32 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    6 to 13.8 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    V-DFN3030-8
  • Applications
    Mobile Computing, Point of Load

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products