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DMT3022UEV

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The DMT3022UEV from Diodes Incorporated is a MOSFET with Continous Drain Current 17 A, Drain Source Resistance 12.2 to 28 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.8 V. Tags: Surface Mount. More details for DMT3022UEV can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT3022UEV
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    17 A
  • Drain Source Resistance
    12.2 to 28 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.8 V
  • Gate Charge
    13.9 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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