1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT35M4LFDF4

DMT35M4LFDF4

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT35M4LFDF4 Image

The DMT35M4LFDF4 from Diodes Incorporated is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 6 to 13.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.15 to 2.5 V. Tags: Surface Mount. More details for DMT35M4LFDF4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT35M4LFDF4
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    6 to 13.5 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.15 to 2.5 V
  • Gate Charge
    14.9 nC
  • Power Dissipation
    2.19 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN2020-6
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products