DMT4003SCT

Note : Your request will be directed to Diodes Incorporated.

DMT4003SCT Image

The DMT4003SCT from Diodes Incorporated is a MOSFET with Continous Drain Current 205 A, Drain Source Resistance 2.4 to 3 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMT4003SCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT4003SCT
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    205 A
  • Drain Source Resistance
    2.4 to 3 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    75.6 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents

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