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RW4E045AJ

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The RW4E045AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -4.5 to 4.5 A, Drain Source Resistance 28 to 58 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RW4E045AJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    RW4E045AJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.5 to 4.5 A
  • Drain Source Resistance
    28 to 58 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    4 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN16167T
  • Applications
    Switching, DC/DC converter, Battery switch

Technical Documents
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