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TK56E12N1

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The TK56E12N1 from Toshiba is a MOSFET with Continous Drain Current 112 A, Drain Source Resistance 5.8 to 7 milliohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK56E12N1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK56E12N1
  • Manufacturer
    Toshiba
  • Description
    120 V, 69 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    112 A
  • Drain Source Resistance
    5.8 to 7 milliohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    69 nC
  • Power Dissipation
    168 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
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