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IPD50N06S4L-08

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IPD50N06S4L-08 Image

The IPD50N06S4L-08 from Infineon Technologies is a MOSFET with Continous Drain Current 47 to 50 A, Drain Source Resistance 6.3 to 13.5 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for IPD50N06S4L-08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50N06S4L-08
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    47 to 50 A
  • Drain Source Resistance
    6.3 to 13.5 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    49 to 64 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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