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STF11N60M2-EP

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STF11N60M2-EP Image

The STF11N60M2-EP from STMicroelectronics is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 550 to 595 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 3.25 to 4.75 V. Tags: Through Hole. More details for STF11N60M2-EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    STF11N60M2-EP
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 12.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    550 to 595 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    3.25 to 4.75 V
  • Gate Charge
    12.4 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220FP
  • Applications
    Switching applications

Technical Documents
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