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DMT47M2LDVQ

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The DMT47M2LDVQ from Diodes Incorporated is a MOSFET with Continous Drain Current 11.9 A, Drain Source Resistance 8.4 to 15 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.3 V. Tags: Surface Mount. More details for DMT47M2LDVQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT47M2LDVQ
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    11.9 A
  • Drain Source Resistance
    8.4 to 15 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.3 V
  • Gate Charge
    6.72 to 14 nC
  • Power Dissipation
    2.34 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Motor Control, Power Management Functions, DC-DC Converters

Technical Documents
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