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DMT6010SCT

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DMT6010SCT Image

The DMT6010SCT from Diodes Incorporated is a MOSFET with Continous Drain Current 98 A, Drain Source Resistance 5.5 to 7.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMT6010SCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6010SCT
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    98 A
  • Drain Source Resistance
    5.5 to 7.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    36.3 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220-3
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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