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DMT6017LFDF

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The DMT6017LFDF from Diodes Incorporated is a MOSFET with Continous Drain Current 8.1 A, Drain Source Resistance 13.2 to 23. milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2.3 V. Tags: Surface Mount. More details for DMT6017LFDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6017LFDF
  • Manufacturer
    Diodes Incorporated
  • Description
    65 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.1 A
  • Drain Source Resistance
    13.2 to 23. milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.3 V
  • Gate Charge
    7.5 to 15.3 nC
  • Power Dissipation
    1.76 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    DC-DC Converter, Adaptor Switch, Wireless Charging

Technical Documents
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