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DMT61M8SPS

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DMT61M8SPS Image

The DMT61M8SPS from Diodes Incorporated is a MOSFET with Continous Drain Current 205 A, Drain Source Resistance 1.1 to 1.6 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMT61M8SPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT61M8SPS
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    205 A
  • Drain Source Resistance
    1.1 to 1.6 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    130.6 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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