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DMT69M5LH3

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DMT69M5LH3 Image

The DMT69M5LH3 from Diodes Incorporated is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 5.8 to 15 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Through Hole. More details for DMT69M5LH3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT69M5LH3
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    5.8 to 15 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.5 V
  • Gate Charge
    15.4 to 28.4 nC
  • Power Dissipation
    3.3 to 96 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO251
  • Applications
    Motor Control, Backlighting

Technical Documents
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