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PMCM6501VNE

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PMCM6501VNE Image

The PMCM6501VNE from Nexperia is a MOSFET with Continous Drain Current 4.6 to 9.6 A, Drain Source Resistance 15 to 45 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for PMCM6501VNE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMCM6501VNE
  • Manufacturer
    Nexperia
  • Description
    12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.6 to 9.6 A
  • Drain Source Resistance
    15 to 45 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    16.1 to 24 nC
  • Power Dissipation
    0.556 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    WLCSP6
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
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