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DMT69M9LPDW

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The DMT69M9LPDW from Diodes Incorporated is a MOSFET with Continous Drain Current 8.8 to 44 A, Drain Source Resistance 9.9 to 16.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.7 to 2 V. Tags: Surface Mount. More details for DMT69M9LPDW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT69M9LPDW
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.8 to 44 A
  • Drain Source Resistance
    9.9 to 16.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.7 to 2 V
  • Gate Charge
    15.6 to 33.5 nC
  • Power Dissipation
    2.5 to 40.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Wireless Charging, DC-DC Converters, Power Management

Technical Documents
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