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DMT8030LFDF

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The DMT8030LFDF from Diodes Incorporated is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 23.8 to 38 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for DMT8030LFDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT8030LFDF
  • Manufacturer
    Diodes Incorporated
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    23.8 to 38 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    5.4 to 10.4 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Technical Documents
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