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PJP60R620E

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The PJP60R620E from PANJIT Semiconductor is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 540 to 620 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for PJP60R620E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJP60R620E
  • Manufacturer
    PANJIT Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    540 to 620 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    21 nC
  • Power Dissipation
    78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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