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DMTH6009LK3Q

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DMTH6009LK3Q Image

The DMTH6009LK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 14.2 to 59 A, Drain Source Resistance 8.3 to 12.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.7 to 2 V. Tags: Surface Mount. More details for DMTH6009LK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH6009LK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14.2 to 59 A
  • Drain Source Resistance
    8.3 to 12.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.7 to 2 V
  • Gate Charge
    15.6 to 33.5 nC
  • Power Dissipation
    3.2 to 60 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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