The DMWS120H100SM4 from Diodes Incorporated is an N-Channel Enhancement Mode SiC MOSFET that has been designed to minimize the on-state resistance while maintaining superior switching performance. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of 80 milli-ohms. This MOSFET has a continuous drain current of up to 37.2 A and a power dissipation of less than 208 W. It has a low input capacitance and a high drain-source breakdown voltage rating that is suitable for power applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 15.75 x 40.61 mm and is ideal for EV battery chargers, solar inverters, DC-DC converters, industrial motor drives, data centers, and telecom power supply applications.