The DMWSH120H28SM4Q from Diodes Incorporated is an Automotive Qualified N-Channel Enhancement Mode SiC MOSFET that has been designed to minimize the on-state resistance while maintaining superior switching performance. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of 20 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 100 A and a power dissipation of less than 429 W. It has a low input capacitance and a high drain-source breakdown voltage rating that is suitable for power applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 16.30 x 41.42 x 5.21 mm and is ideal for EV high-power DC-DC converters, EV charging systems, AC-DC traction inverters, and automotive motor driver applications.