The DMWSH120H90SM4Q from Diodes Incorporated is an Automotive Qualified N-Channel SiC Power MOSFET that is ideal for EV charging systems, high voltage DC-DC converters, data centers/telecom power supplies, high voltage BLDC motor controls, AC-DC converters, and solar inverter applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 97.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 40 A and a power dissipation of less than 235 W. It has been designed to minimize the on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 40.61 x 15.75 mm.
