The WNSC2M1K0170W from WeEN Semiconductors is an N-Channel Silicon Carbide MOSFET that is suitable for switch mode power supplies (SMPS), auxiliary power supplies, and solar inverter applications. It has a drain-source breakdown voltage of over 1700 V, a gate threshold voltage of 3.2 V, and a drain-source on-resistance of less than 750 milli-ohms. This power MOSFET has a continuous drain current of up to 7 A and a power dissipation of less than 79 W. It is an optimum gate-source voltage tailored for fly-back topologies and has its dV/dt controlled for EMI regulation. This RoHS-compliant MOSFET is UIS tested to 100% and has reduced cooling requirements, making it ideal for high-frequency and high-efficiency applications. It is available in a through-hole package that measures 41.2 x 15.9 mm.