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ZVN4310G

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The ZVN4310G from Diodes Incorporated is a MOSFET with Continous Drain Current 1.67 A, Drain Source Resistance 400 to 750 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for ZVN4310G can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZVN4310G
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.67 A
  • Drain Source Resistance
    400 to 750 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    DC-DC converters, Solenoids/relay driver for automotive applications

Technical Documents
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