The RM20N650T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 165 to 210 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Through Hole. More details for RM20N650T2 can be seen below.