1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMHC10A07T8

ZXMHC10A07T8

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMHC10A07T8 Image

The ZXMHC10A07T8 from Diodes Incorporated is a MOSFET with Continous Drain Current -0.9 to 1.1 A, Drain Source Resistance 0.7 to 1.45 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for ZXMHC10A07T8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMHC10A07T8
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V N/P-Channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.9 to 1.1 A
  • Drain Source Resistance
    0.7 to 1.45 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    2.9 to 3.5 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOIC
  • Applications
    DC Motor Control, DC-AC Inverters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products