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ZXMN10A11G

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The ZXMN10A11G from Diodes Incorporated is a MOSFET with Continous Drain Current 1.7 A, Drain Source Resistance 450 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for ZXMN10A11G can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN10A11G
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.7 A
  • Drain Source Resistance
    450 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    3.5 to 5.4 nC
  • Power Dissipation
    3.9 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Motor control, DC-DC converters, Power management functions, Uninterrupted power supply

Technical Documents
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