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TSM8N80CZ

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TSM8N80CZ Image

The TSM8N80CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 1100 to 1400 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM8N80CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM8N80CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    1100 to 1400 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    41 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Supply, Lighting

Technical Documents
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