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ZXMN2B03E6

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ZXMN2B03E6 Image

The ZXMN2B03E6 from Diodes Incorporated is a MOSFET with Continous Drain Current 4.3 A, Drain Source Resistance 75 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for ZXMN2B03E6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN2B03E6
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.3 A
  • Drain Source Resistance
    75 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    14.5 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT26
  • Applications
    DC - DC Converters, Power Management Functions, Disconnect switches, Motor control

Technical Documents
View details on the manufacturer's website
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