1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMN3A06DN8

ZXMN3A06DN8

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMN3A06DN8 Image

The ZXMN3A06DN8 from Diodes Incorporated is a MOSFET with Continous Drain Current 6.2 A, Drain Source Resistance 35 to 50 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for ZXMN3A06DN8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMN3A06DN8
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.2 A
  • Drain Source Resistance
    35 to 50 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 V
  • Gate Charge
    17.5 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products