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IPB80N03S4L-02

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The IPB80N03S4L-02 from Infineon Technologies is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 2.5 to 3.2 Mohms, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Through Hole. More details for IPB80N03S4L-02 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB80N03S4L-02
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    2.5 to 3.2 Mohms
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    110 to 140 nC
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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