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STS4DNF60L

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STS4DNF60L Image

The STS4DNF60L from STMicroelectronics is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 45 to 65 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for STS4DNF60L can be seen below.

Product Specifications

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Product Details

  • Part Number
    STS4DNF60L
  • Manufacturer
    STMicroelectronics
  • Description
    -15 to 15 V, 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    45 to 65 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    15 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Switching applications

Technical Documents
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