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ZXMN3B04N8

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ZXMN3B04N8 Image

The ZXMN3B04N8 from Diodes Incorporated is a MOSFET with Continous Drain Current 8.9 A, Drain Source Resistance 21 to 40 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 V. Tags: Surface Mount. More details for ZXMN3B04N8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN3B04N8
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.9 A
  • Drain Source Resistance
    21 to 40 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 V
  • Gate Charge
    23.1 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC-DC Converters, Power Management Functions, Motor Control, Disconnect Switches

Technical Documents
View details on the manufacturer's website
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