SiB452DK

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SiB452DK Image

The SiB452DK from Vishay is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 1800 to 6000 Milliohm, Drain Source Breakdown Voltage 190 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for SiB452DK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiB452DK
  • Manufacturer
    Vishay
  • Description
    -16 to 16 V, 13 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    1800 to 6000 Milliohm
  • Drain Source Breakdown Voltage
    190 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    2.3 to 4.3 nC
  • Power Dissipation
    13 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-75
  • Applications
    Boost converter for portable devices

Technical Documents

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