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RQ5E030AJ

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The RQ5E030AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -3 to 3 A, Drain Source Resistance 51 to 109 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RQ5E030AJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ5E030AJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 2.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 to 3 A
  • Drain Source Resistance
    51 to 109 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    2.1 nC
  • Power Dissipation
    1 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-346T
  • Applications
    Switching

Technical Documents
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