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ZXMS6005DN8Q

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The ZXMS6005DN8Q from Diodes Incorporated is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 150 to 250 Milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 1.16 W. Tags: Surface Mount. More details for ZXMS6005DN8Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMS6005DN8Q
  • Manufacturer
    Diodes Incorporated
  • Description
    65 V, 1.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    150 to 250 Milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    1.16 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Lamp Driver, Motor Driver, Relay Driver, Solenoid Driver

Technical Documents
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