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ZXMS6006DGQ-13

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ZXMS6006DGQ-13 Image

The ZXMS6006DGQ-13 from Diodes Incorporated is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 75 to 125 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 1.82 W. Tags: Surface Mount. More details for ZXMS6006DGQ-13 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMS6006DGQ-13
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 2.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    75 to 125 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    1.82 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223 (Type DN)
  • Applications
    Lamp Driver, Motor Driver, Relay Driver, Solenoid Driver

Technical Documents
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