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ZXMS6006SGQ

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The ZXMS6006SGQ from Diodes Incorporated is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 75 to 125 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 3 W. Tags: Surface Mount. More details for ZXMS6006SGQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMS6006SGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 2.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    75 to 125 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    3 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Lamp Driver, Motor Driver, Relay Driver, Solenoid Driver

Technical Documents
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