FTK0404PSOT883

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The FTK0404PSOT883 from First Silicon is a MOSFET with Continous Drain Current -1.4 A, Drain Source Resistance 0.48 to 2.2 ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -0.4 to -1.2 V. Tags: Surface Mount. More details for FTK0404PSOT883 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0404PSOT883
  • Manufacturer
    First Silicon
  • Description
    -20 V, -1.4 A, P-Channel Enhancement Mode

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.4 A
  • Drain Source Resistance
    0.48 to 2.2 ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -0.4 to -1.2 V
  • Gate Charge
    2.8 nC
  • Switching Speed
    24.2 to 246 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-883
  • Applications
    Power Management in Notebook, Portable Equipment, Battery Powered System
  • Note
    Input Capacitance :- 152 pF

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